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* 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF-19500/444 * 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS PER MIL-PRF 19500/445 * SCHOTTKY BARRIER DIODES * LEADLESS PACKAGE FOR SURFACE MOUNT * METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810
CDLL5711 CDLL5712 CDLL6263 CDLL6857 CDLL6858
MAXIMUM RATINGS
Operating Temperature: -65C to +150C Storage Temperature: -65C to +150C Operating Current: 5711 & 6263 TYPES :33mA dc @ TEC = +140C 2810, 5712 & 6858 Types :75mA dc @ TEC = +130C 6857 Types :150mA dc @ TEC = +110C Derating: :All Types: Derate to 0 (zero) mA dc @ +150C
ELECTRICAL CHARACTERISTICS @ 25C, unless otherwise specified.
CDI TYPE NUMBER MINIMUM BREAKDOWN VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM FORWARD VOLTAGE MAXIMUM REVERSE LEAKAGE CURRENT V MAXIMUM CAPACITANCE @ R = 0 VOLTS f = 1.0 MHZ VBR @ 10 A VOLTS 1N5711UR-1 1N5712UR-1 1N6857UR-1 1N6858UR-1 CDLL2810 CDLL5711 CDLL5712 CDLL6263 CDLL6857 CDLL6858 70 20 20 70 20 70 20 60 20 70 V @ 1 mA F VOLTS 0.41 0.41 0.35 0.36 0.41 0.41 0.41 0.41 0.35 0.36 V I F@ F NA 200 150 150 200 100 200 150 200 150 200 1 @V R R VOLTS 50 16 16 50 15 50 16 50 16 50 C PICO FARADS 2.0 2.0 4.5 4.5 2.0 2.0 2.0 2.2 4.5 4.5 1 1 2 2 1 1 1 1 2 2 T ESDS CLASS
DIM D F G G1 S
MILLIMETERS INCHES MIN MAX MIN MAX 1.60 1.70 0.063 0.067 0.41 0.55 0.016 0.022 3.30 3.70 .130 .146 2.54 REF. .100 REF. 0.03 MIN. .001 MIN.
VOLTS@mA 1.0 @ 15 1.0@35 0.75@ 35 0.65 @ 15 1.0 @ 35 1.0 @ 15 1.0 @ 35 1.0 @ 15 0.75 @ 35 0.65 @ 15
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed glass case. (MELF, SOD-80, LL34) LEAD FINISH: Tin / Lead THERMAL RESISTANCE: (ROJEC): 100 C/W maximum at L = 0 inch THERMAL IMPEDANCE: (ZOJX): 40 C/W maximum POLARITY: Cathode end is banded.
NOTE:
Effective Minority Carrier Lifetime ( ) is 100 Pico Seconds
NOTICE:
Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the factory for qualification completion dates. These two part numbers are being introduced by CDI as "drop-in" replacements for the 5711 and 5712. They provide a more robust mechanical design and a higher ESDS class with the only trade-off being an increase in capacitance.
MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) Of this Device is Approximately +6PPM/C. The COE of the Mounting Surface System Should Be Selected To Provide A Suitable Match With This Device.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (978) 689-0803 WEBSITE: http://www.microsemi.com
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1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL5711, CDLL5712, CDLL2810, CDLL6263, CDLL6857 and CDLL6858
100 IF - FORWARD CURRENT (mA) IR - REVERSE CURRENT (nA) 0 .2 .4 .6 .8 1.0 1.2
10,000
10
1000
1.0
100
.1
10
.01
1.0 0 5.0 10 15 20 25 30
VF - FORWARD VOLTAGE (V) Figure 1. I-V Curve Showing Typical Forward Voltage Variation with Temperature for the CDLL2810 and CDLL5712 Schottky Diodes.
VR - REVERSE VOLTAGE (V) (PULSED) Figure 2. CDLL2810 and CDLL5712 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
50 IF - FORWARD CURRENT (mA) IR - REVERSE CURRENT (nA)
100,000 1000 RD - DYNAMIC RESISTANCE (!!) 0 10 20 30 40 50 60
10 5
10,000
1000
100
1 .5
1
.1 .05
10
10
.01
1 0 .2 .4 .6 .8 1.0 1.2
1 .1 1.0 10 100
VF - FORWARD VOLTAGE (V) Figure 3. I-V Curve Showing Typical Forward Voltage Variation with Temperature for Schottky Diode CDLL5711.
VR - REVERSE VOLTAGE (V) (PULSED) Figure 4. CDLL5711 Typical Variation of Reverse Current (IR) vs. Reverse Voltage (VR) at Various Temperatures.
IF - FORWARD CURRENT (mA) (PULSED) Figure 5. Typical Dynamic Resistance (RD) vs. Forward Current (IF).
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